技术参数

• Package / Case SC-100, SOT-669
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100A (Tc)
• Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 4.5V
• Power Dissipation (Max) 62.5W (Tc)
• Vgs(th) (Max) @ Id 950mV @ 1mA
• Supplier Device Package LFPAK56, Power-SO8
• Drive Voltage (Max Rds On, Min Rds On) 4.5V
• Vgs (Max) ±10V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 92 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 6150 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant