技术参数

• Package / Case 20-SOIC (0.295", 7.50mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 4.75W (Tc)
• Drain to Source Voltage (Vdss) 65V
• Current - Continuous Drain (Id) @ 25°C 13.6A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 3052pF @ 25V
• Rds On (Max) @ Id, Vgs 12.3mOhm @ 10A, 10V
• Gate Charge (Qg) (Max) @ Vgs 40.2nC @ 5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2V @ 1mA
• Supplier Device Package 20-SO
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant