技术参数

• Package / Case SC-100, SOT-669
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 34.3A (Tc)
• Rds On (Max) @ Id, Vgs 23mOhm @ 10A, 10V
• Power Dissipation (Max) 62.5W (Tc)
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package LFPAK56, Power-SO8
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2264 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant