技术参数

• Package / Case 8-SMD, Flat Lead
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 330mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 3A
• Input Capacitance (Ciss) (Max) @ Vds 590pF @ 10V
• Rds On (Max) @ Id, Vgs 49mOhm @ 1.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.2V @ 200µA
• Supplier Device Package VS-8 (2.9x1.5)
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)