技术参数

• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 250mA (Tj)
• FET Feature Depletion Mode
• Vgs (Max) ±20V
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant