技术参数

• Package / Case ISOPLUSi5-PAK™
• Mounting Type Through Hole
• Configuration N and P-Channel, Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 89W, 132W
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 54A (Tc), 62A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1370pF @ 25V, 5080pF @ 25V
• Rds On (Max) @ Id, Vgs 24mOhm @ 38A, 10V, 11mOhm @ 25A, 10V
• Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V, 104nC @ 10V
• Vgs(th) (Max) @ Id 4V @ 250µA, 4.5V @ 250µA
• Supplier Device Package ISOPLUS i4-PAC™
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected