技术参数
-
Package / Case
TO-236-3, SC-59, SOT-23-3
-
Mounting Type
Surface Mount
-
Operating Temperature
150°C (TJ)
-
FET Type
N-Channel
-
Input Capacitance (Ciss) (Max) @ Vds
30pF @ 10V (VGS)
-
Voltage - Breakdown (V(BR)GSS)
25 V
-
Supplier Device Package
SOT-23 (TO-236AB)
-
Drain to Source Voltage (Vdss)
25 V
-
Power - Max
250 mW
-
Resistance - RDS(On)
12 Ohms
-
Voltage - Cutoff (VGS off) @ Id
6 V @ 1 µA
-
Current - Drain (Idss) @ Vds (Vgs=0)
40 mA @ 15 V
-
ECCN
EAR99
-
HTSUS
8541.21.0095
-
Moisture Sensitivity Level (MSL)
1 (Unlimited)
-
REACH Status
REACH Unaffected
-
RoHS Status
ROHS3 Compliant
相关产品
RF MOSFET JFET SOT23-3
库存:
19420
Top