- 产品型号 NVMFD5C650NLWFT1G
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 MOSFET 2N-CH 60V 21A/111A 8DFN
- 分类 FET、MOSFET 阵列
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PDF
- 库存 1300
技术参数
- Package / Case 8-PowerTDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 3.5W (Ta), 125W (Tc)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 21A (Ta), 111A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2546pF @ 25V
- Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V
- Vgs(th) (Max) @ Id 2.2V @ 98µA
- Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Grade Automotive
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


