技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature -65°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 335mA (Ta)
• Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 4.5V
• Power Dissipation (Max) 830mW (Tc)
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Supplier Device Package TO-236AB
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±10V
• Drain to Source Voltage (Vdss) 55 V
• Gate Charge (Qg) (Max) @ Vgs 1 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant