技术参数

• Package / Case 4-VDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.6W
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 10.1A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
• Rds On (Max) @ Id, Vgs 13mOhm @ 6.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 11nC @ 4V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Supplier Device Package 4-QFN (2x2)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• RoHS Status ROHS3 Compliant