- 产品型号 NSTB60BDW1T1
- 品牌 Sanyo Semiconductor/onsemi
- RoHS No
- 描述 TRANS NPN PREBIAS/PNP SOT363
- 分类 双极晶体管阵列,预偏置
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PDF
- 库存 1500
技术参数
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Transistor Type 1 NPN Pre-Biased, 1 PNP
- Power - Max 250mW
- Current - Collector (Ic) (Max) 150mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max) 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 120 @ 5mA, 10V
- Frequency - Transition 140MHz
- Resistor - Base (R1) 22kOhms
- Resistor - Emitter Base (R2) 47kOhms
- Supplier Device Package SC-88/SC70-6/SOT-363
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant


