技术参数

• Package / Case 16-PowerQFN
• Mounting Type Surface Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.7W
• Drain to Source Voltage (Vdss) 24V
• Current - Continuous Drain (Id) @ 25°C 11.4A
• Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 20V
• Rds On (Max) @ Id, Vgs 11mOhm @ 15A, 10V
• Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package 16-QFN-FBIP (10.5x10.5)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant