技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 285mW (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 590mA (Ta), 410mA (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 30.3pF @ 15V, 43.2pF @ 15V
• Rds On (Max) @ Id, Vgs 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 1.05nC @ 4.5V, 1.2nC @ 4.5V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package DFN1010B-6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant