技术参数
- Package / Case Die
- Configuration 2 N-Channel (Dual) Common Source
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss) 120V
- Current - Continuous Drain (Id) @ 25°C 3.4A
- Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
- Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
- Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
- Vgs(th) (Max) @ Id 2.5V @ 700µA
- Supplier Device Package Die
- ECCN EAR99
- HTSUS 8541.29.0040
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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