技术参数
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 31A (Ta)
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 30A, 5V
- Vgs(th) (Max) @ Id 2.5V @ 16mA
- Supplier Device Package Die
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 20 V
- ECCN EAR99
- HTSUS 8541.29.0040
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
GANFET N-CH 40V 53A DIE
库存: 19049
GANFET N-CH 100V 16A DIE
库存: 35335
TRANS GAN BUMPED DIE
库存: 12647
GANFET N-CH 40V 29A DIE
库存: 34495
TRANS GAN .0015OHM 40V 14LGA
库存: 3921
GANFET 2N-CH 30V 16A DIE
库存: 19824
GANFET N-CH 100V DIE
库存: 15356
TRANS GAN 80V .0032OHM AECQ101
库存: 23295
TRANS GAN 100V DIE .0018OHM
库存: 49640
