技术参数

• Transistor Type NPN
• Gain 11.5dB
• Power - Max 3W
• Current - Collector (Ic) (Max) 500mA
• Voltage - Collector Emitter Breakdown (Max) 16V
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 250mA, 5V
• Frequency - Transition 175MHz
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)