技术参数

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.2W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 30A
• Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
• Rds On (Max) @ Id, Vgs 11.1mOhm @ 14.4A, 10V
• Gate Charge (Qg) (Max) @ Vgs 20nC @ 15V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package V-DFN3030-8 (Type K)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant