技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 285mW
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 260mA
• Input Capacitance (Ciss) (Max) @ Vds 23.6pF @ 10V
• Rds On (Max) @ Id, Vgs 2.8Ohm @ 200mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package DFN1010B-6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant