技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Source
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 120V
• Current - Continuous Drain (Id) @ 25°C 3.4A
• Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
• Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
• Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
• Vgs(th) (Max) @ Id 2.5V @ 700µA
• Supplier Device Package Die
• ECCN EAR99
• HTSUS 8541.21.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant