- 产品型号 RGT30NS65DGTL
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 IGBT TRENCH FIELD 650V 30A LPDS
- 分类 单 IGBT
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- 库存 2478
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 175°C (TJ)
- Input Type Standard
- Reverse Recovery Time (trr) 55 ns
- Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 15A
- Supplier Device Package LPDS
- IGBT Type Trench Field Stop
- Td (on/off) @ 25°C 18ns/64ns
- Test Condition 400V, 15A, 10Ohm, 15V
- Gate Charge 32 nC
- Current - Collector (Ic) (Max) 30 A
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector Pulsed (Icm) 45 A
- Power - Max 133 W
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


