技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
• Rds On (Max) @ Id, Vgs 72mOhm @ 2.7A, 10V
• Power Dissipation (Max) 2W (Ta)
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-SOIC
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Vgs (Max) 16V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 7 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 590 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant