技术参数

• Package / Case TO-220-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.3A (Tc)
• Rds On (Max) @ Id, Vgs 3.5Ohm @ 2.5A, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package TO-220-3
• Drain to Source Voltage (Vdss) 1000 V
• Gate Charge (Qg) (Max) @ Vgs 120 nC @ 20 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status RoHS non-compliant