技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 590A (Tc)
• Rds On (Max) @ Id, Vgs 2.1mOhm @ 500mA, 10V
• Power Dissipation (Max) 2200W
• Supplier Device Package Module
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 2000 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 50000 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected