技术参数

• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 8.23dB ~ 9.09dB
• Power - Max 65W
• Current - Collector (Ic) (Max) 7.7A
• Voltage - Collector Emitter Breakdown (Max) 65V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant