技术参数

• Package / Case 336E-02
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 8.5dB ~ 10.3dB
• Power - Max 25W
• Current - Collector (Ic) (Max) 1.25mA
• Voltage - Collector Emitter Breakdown (Max) 55V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V
• Supplier Device Package 336E-02, Style 1
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status ROHS3 Compliant