技术参数

• Package / Case SP3
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 520W
• Drain to Source Voltage (Vdss) 1000V (1kV)
• Current - Continuous Drain (Id) @ 25°C 20A
• Input Capacitance (Ciss) (Max) @ Vds 6000pF @ 25V
• Rds On (Max) @ Id, Vgs 720mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id 4V @ 2.5mA
• Supplier Device Package SP3
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected