- 产品型号 SSM6N16FUTE85LF
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 MOSFET 2N-CH 20V 0.1A US6
- 分类 FET、MOSFET 阵列
- 库存 2190
技术参数
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 200mW
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 100mA
- Input Capacitance (Ciss) (Max) @ Vds 9.3pF @ 3V
- Rds On (Max) @ Id, Vgs 3Ohm @ 10mA, 4V
- Vgs(th) (Max) @ Id 1.1V @ 100µA
- Supplier Device Package US6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


