技术参数

• Package / Case M135
• Mounting Type Chassis, Stud Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 8.2dB
• Power - Max 30W
• Current - Collector (Ic) (Max) 3A
• Voltage - Collector Emitter Breakdown (Max) 35V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA, 5V
• Frequency - Transition 175MHz
• Supplier Device Package M135
• ECCN OBSOLETE
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected