技术参数

• Package / Case M113
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 18dB
• Power - Max 80W
• Current - Collector (Ic) (Max) 4.5A
• Voltage - Collector Emitter Breakdown (Max) 36V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 500mA, 5V
• Frequency - Transition 30MHz
• Supplier Device Package M113
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected