技术参数

• Package / Case 55BT
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 8.5dB ~ 9.5dB
• Power - Max 5W
• Current - Collector (Ic) (Max) 400mA
• Voltage - Collector Emitter Breakdown (Max) 22V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 100mA, 5V
• Frequency - Transition 3.7GHz
• Supplier Device Package 55BT
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected