技术参数

• Package / Case 55HX
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 12dB ~ 14.5dB
• Power - Max 320W
• Current - Collector (Ic) (Max) 30A
• Voltage - Collector Emitter Breakdown (Max) 110V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 1A, 5V
• Frequency - Transition 1.5MHz ~ 30MHz
• Supplier Device Package 55HX
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected