技术参数

• Package / Case M216
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 250°C (TJ)
• Gain 6.5dB
• Power - Max 1000W
• Current - Collector (Ic) (Max) 28A
• Voltage - Collector Emitter Breakdown (Max) 65V
• DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 1A, 5V
• Frequency - Transition 1.025GHz ~ 1.15GHz
• Supplier Device Package M216
• ECCN OBSOLETE
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected