技术参数

• Package / Case 55AW
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 10dB
• Power - Max 120W
• Current - Collector (Ic) (Max) 4A
• Voltage - Collector Emitter Breakdown (Max) 65V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 500mA, 5V
• Frequency - Transition 1.03GHz ~ 1.09GHz
• Supplier Device Package 55AW
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected