技术参数

• Package / Case 55ST
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 9.2dB
• Power - Max 833W
• Current - Collector (Ic) (Max) 24A
• Voltage - Collector Emitter Breakdown (Max) 70V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
• Frequency - Transition 1.03GHz ~ 1.09GHz
• Supplier Device Package 55ST
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected