技术参数

• Package / Case 55ST-1
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 7.15dB ~ 8.7dB
• Power - Max 320W
• Current - Collector (Ic) (Max) 15A
• Voltage - Collector Emitter Breakdown (Max) 65V
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 1A, 5V
• Frequency - Transition 1.2GHz ~ 1.4GHz
• Supplier Device Package 55ST-1
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected