技术参数

• Package / Case 55LT
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 6.8dB
• Power - Max 39W
• Current - Collector (Ic) (Max) 5A
• Voltage - Collector Emitter Breakdown (Max) 50V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 200mA, 5V
• Frequency - Transition 1GHz ~ 1.4GHz
• Supplier Device Package 55LT
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected