技术参数

• Package / Case 55CT
• Mounting Type Chassis Mount
• Transistor Type NPN
• Operating Temperature 200°C (TJ)
• Gain 8.5dB ~ 10dB
• Power - Max 125W
• Current - Collector (Ic) (Max) 2.5A
• Voltage - Collector Emitter Breakdown (Max) 55V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 300mA, 5V
• Frequency - Transition 960MHz ~ 1.215GHz
• Supplier Device Package 55CT
• ECCN OBSOLETE
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected