技术参数

• Package / Case 12-SIP
• Mounting Type Through Hole
• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 4W
• Drain to Source Voltage (Vdss) 250V
• Current - Continuous Drain (Id) @ 25°C 7A
• Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
• Rds On (Max) @ Id, Vgs 250mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package 12-SIP
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant