技术参数

• Package / Case 3-UFDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
• Rds On (Max) @ Id, Vgs 2Ohm @ 100mA, 4V
• Power Dissipation (Max) 470mW (Ta)
• Vgs(th) (Max) @ Id 1V @ 250µA
• Supplier Device Package X1-DFN1006-3
• Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 0.45 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 32 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant