技术参数

• Package / Case 8-PowerSMD, Flat Leads
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -40°C ~ 85°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.7W, 2.5W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 16A, 40A
• Input Capacitance (Ciss) (Max) @ Vds 5180pF @ 10V
• Rds On (Max) @ Id, Vgs 10mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 4.38mA
• Supplier Device Package HSO8-F3-B
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant