技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 50mA (Ta)
• Rds On (Max) @ Id, Vgs 50Ohm @ 10mA, 2.5V
• Power Dissipation (Max) 150mW (Ta)
• Vgs(th) (Max) @ Id 1.1V @ 100µA
• Supplier Device Package Mini3-G1
• Drive Voltage (Max Rds On, Min Rds On) 2.5V
• Vgs (Max) 10V
• Drain to Source Voltage (Vdss) 50 V
• Input Capacitance (Ciss) (Max) @ Vds 4.5 pF @ 5 V
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)