技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Tc)
• Rds On (Max) @ Id, Vgs 1.1Ohm @ 6A, 10V
• Vgs(th) (Max) @ Id 5.5V @ 4mA
• Supplier Device Package ISOPLUS247™
• Drain to Source Voltage (Vdss) 1000 V
• Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected