技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4A (Ta)
• Rds On (Max) @ Id, Vgs 7Ohm @ 2A, 15V
• Power Dissipation (Max) 125W (Tc)
• Supplier Device Package TO-3P
• Drive Voltage (Max Rds On, Min Rds On) 15V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 1500 V
• Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• RoHS Status ROHS3 Compliant