技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 10A (Tc)
• Rds On (Max) @ Id, Vgs 140mOhm @ 10A
• Power Dissipation (Max) 170W (Tc)
• Supplier Device Package TO-247AB
• Drain to Source Voltage (Vdss) 1200 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)