技术参数

• Mounting Type Surface Mount
• Operating Temperature 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 25A (Tc)
• Rds On (Max) @ Id, Vgs 120mOhm @ 10A
• Power Dissipation (Max) 170W (Tc)
• Drain to Source Voltage (Vdss) 1200 V
• Input Capacitance (Ciss) (Max) @ Vds 1403 pF @ 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant