技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.9W (Ta), 16W (Tc)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 8.2A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 1635pF @ 30V
• Rds On (Max) @ Id, Vgs 17mOhm @ 8.2A, 10V
• Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-Power33 (3x3)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant