技术参数

• Package / Case 12-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 4 N-Channel (Full Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.9W
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 8A
• Input Capacitance (Ciss) (Max) @ Vds 2295pF @ 30V
• Rds On (Max) @ Id, Vgs 17.5mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 12-MLP (5x4.5)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant