- 产品型号 NE3516S02-T1C-A
- 品牌 CEL (California Eastern Laboratories)
- RoHS No
- 描述 RF MOSFET GAAS HJ-FET 2V S02
- 分类 RF FET、MOSFET
-
PDF
- 库存 1500
技术参数
- Package / Case 4-SMD, Flat Leads
- Current Rating (Amps) 60mA
- Frequency 12GHz
- Configuration N-Channel
- Power - Output 165mW
- Gain 14dB
- Technology GaAs HJ-FET
- Noise Figure 0.35dB
- Supplier Device Package S02
- Voltage - Rated 4 V
- Voltage - Test 2 V
- Current - Test 10 mA
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
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RF MOSFET GAAS HJ-FET 2V S02
库存: 1500
