技术参数

• Package / Case TO-276AA
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 225°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• Current - Continuous Drain (Id) @ 25°C 8A (Tc) (158°C)
• Rds On (Max) @ Id, Vgs 170mOhm @ 8A
• Power Dissipation (Max) 200W (Tc)
• Supplier Device Package TO-276
• Drain to Source Voltage (Vdss) 650 V
• Input Capacitance (Ciss) (Max) @ Vds 720 pF @ 35 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS non-compliant