技术参数

• Package / Case SOT-563, SOT-666
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 375mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 200mA
• Input Capacitance (Ciss) (Max) @ Vds 13pF @ 10V
• Rds On (Max) @ Id, Vgs 4.5Ohm @ 100mA, 10V
• Gate Charge (Qg) (Max) @ Vgs 0.44nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 1.5V @ 250µA
• Supplier Device Package SOT-666
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant